advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 40v low on-resistance r ds(on) 28m fast switching performance i d 6a rohs compliant p-ch bv dss -40v r ds(on) 42m ? description i d -5a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 40 -40 v v gs gate-source voltage + 16 + 16 v i d @t a =25 continuous drain current 3 6.0 -5.0 a i d @t a =70 continuous drain current 3 5.0 -4.0 a i dm pulsed drain current 1 30 -30 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 200901155 parameter 1 thermal data AP4525GEM-HF halogen-free product s1 g1 d1 s2 g2 d2 s1 g1 s2 g2 d1 d1 d2 d2 so-8 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and cost- effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.04 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 28 m ? v gs =4.5v, i d =4a - - 32 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 6 - s i dss drain-source leakage current v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =32v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 16v, v ds =0v - - + 30 ua q g total gate charge 2 i d =6a - 8 13 nc q gs gate-source charge v ds =20v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =20v - 7 - ns t r rise time i d =6a - 20 - ns t d(off) turn-off delay time r g =3 , v gs =10v - 20 - ns t f fall time r d =3.3 -4- ns c iss input capacitance v gs =0v - 580 930 pf c oss output capacitance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 2 3 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.1a, v gs =0v - - 1.8 v t rr reverse recovery time 2 i s =6a, v gs =0v - 20 - ns q rr reverse recovery charge di/dt=100a/s - 12 - nc 2 AP4525GEM-HF n-ch electrical characteristics@ t j =25 o c(unless otherwise specified)
AP4525GEM-HF symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : ,i d =-1ma - -0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 42 m
v gs =-4.5v, i d =-3a - - 60 m
v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -2.5 v g fs forward transconductance v ds =-10v, i d =-5a - 5 - s i dss drain-source leakage current v ds =-40v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 16v, v ds =0v - - + 30 ua q g total gate charge 2 i d =-5a - 9 24 nc q gs gate-source charge v ds =-20v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =-20v - 8.5 - ns t r rise time i d =-5a - 15 - ns t d(off) turn-off delay time r g =3 ,v gs =-10v - 27 - ns t f fall time r d =4 -25- ns c iss input capacitance v gs =0v - 770 1230 pf c oss output capacitance v ds =-20v - 165 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 6 9
source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.1a, v gs =0v - - -1.8 v t rr reverse recovery time 2 i s =-5a, v gs =0v - 20 - ns q rr reverse recovery charge di/dt=-100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 135 : /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 p-ch electrical characteristics@t j =25 o c(unless otherwise specified)
AP4525GEM-HF n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 10 20 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 10 20 30 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 20 40 60 80 100 120 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =4a t a =25 o c 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =10v
a p4525gem-hf n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 5 q v g 4.5v q gs q gd q g charge 0 4 8 12 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =20v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 40 50 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.01 0.1 1 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
AP4525GEM-HF p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 10 20 30 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 30 60 90 120 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-3a t a =25 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d = -5a v g = -10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
a p4525gem-hf p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 7 0 4 8 12 048121620 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-5a v ds =-20v 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v q v g -4.5v q gs q gd q g charge 0.01 0.1 1 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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